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Impact ionization and intervalley electron scattering in InSb and InAs induced by a single terahertz pulse | Scientific Reports
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Intrinsic point defects and the $n$- and $p$-type dopability of the narrow gap semiconductors GaSb and InSb | John Buckeridge
Introduction to Condensed Matter Intrinsic Carrier Concentration (15 points) Shallow Donors in InSb (15 points)
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A model for the energy band gap of GaSbxAs1-x and InSbxAs1-x in the whole composition range - ScienceDirect
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The bulk InSb band structure near the Γ -point with (solid lines) and... | Download Scientific Diagram
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Structural, mechanical, and electronic properties of 25 kinds of <em>III</em>–<em>V</em> binary monolayers: A computational study with first-principles calculation
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Figure 1 from Towards efficient band structure and effective mass calculations for III-V direct band-gap semiconductors | Semantic Scholar
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Adjusting the crystal size of InSb nanowires for optical band gap energy modification - ScienceDirect
Introduction to Condensed Matter Intrinsic Carrier Concentration (15 points) Shallow Donors in InSb (15 points)
![Structural, mechanical, and electronic properties of 25 kinds of <em>III</em>–<em>V</em> binary monolayers: A computational study with first-principles calculation Structural, mechanical, and electronic properties of 25 kinds of <em>III</em>–<em>V</em> binary monolayers: A computational study with first-principles calculation](https://cpb.iphy.ac.cn/article/2019/1996/cpb_28_8_086105/thumbnail/cpb_28_8_086105_f2.jpg)
Structural, mechanical, and electronic properties of 25 kinds of <em>III</em>–<em>V</em> binary monolayers: A computational study with first-principles calculation
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Color online) The calculated band structures of InAs, InSb, and InAs x... | Download Scientific Diagram
Why do III-V semiconductors (e.g., GaAs, GaN and AlN) have a wider bandgap than group IV semiconductors (Ge, Si and SiC) of similar atomic numbers? - Quora
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